Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness-Reference-Cited by-同舟云学术

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Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness

Published:2008-02 Issue:2 Volume:55 Page:695-700
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Dobbert Julia,Kunets Vasyl P.,Morgan Timothy Al.,Guzun Dorel,Mazur Yuriy I.,Masselink William Ted,Salamo Gregory J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4435989/04420111.pdf?arnumber=4420111

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flexible Magnetic Field Nanosensors for Wearable Electronics: A Review;ACS Applied Nano Materials;2023-07-25

2. A Spinning Current Circuit for Hall Measurements Down to the Nanotesla Range;IEEE Transactions on Instrumentation and Measurement;2017-04

3. Detection of the superconducting transition and magnetic flux trapping in a niobium micro-ring by using micro-Hall sensors;Journal of the Korean Physical Society;2016-11

4. Temperature dependence of the low frequency noise in indium arsenide nanowire transistors;Applied Physics Letters;2008-11-17

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