Mathematical Modeling of Annealed Trilayer Oxide-Based Memristor Device-Reference-Cited by-同舟云学术

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Mathematical Modeling of Annealed Trilayer Oxide-Based Memristor Device

Published:2022-12-15 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 3rd International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA)
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Author:

Paramasivam K.¹,Nithya N.²,Napolean A.³

Affiliation:

1. Kumaraguru College of Technology,Professor, Department of EEE,Coimbatore,India

2. Kumaraguru College of Technology,Research Scholar, Department of EEE,Coimbatore,India

3. Karunya Institute of Technology and Sciences,Research Scholar, Department of ECE,Coimbatore,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10046417/10046432/10046528.pdf?arnumber=10046528

Reference11 articles.

1. A Predictive Compact Model of Bipolar RRAM Cells for Circuit Simulations

2. Memristor Model Optimization Based on Parameter Extraction From Device Characterization Data

3. A SPICE Compact Model for Unipolar RRAM Reset Process Analysis

4. VTEAM: A General Model for Voltage-Controlled Memristors

5. Bipolar resistive switching characteristics of HfO2/TiO2/HfO2 Trilayer-structure RRAM devices on Pt and TiN-coated substrates fabricated by atomic layer deposition;wei;Nanoscale Res Lett,2017

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