An X-band high-power amplifier using SiGe/Si HBT and lumped passive components-Reference-Cited by-同舟云学术

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An X-band high-power amplifier using SiGe/Si HBT and lumped passive components

Published:2001-07 Issue:7 Volume:11 Page:287-289
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Zhenqiang Ma ,Mohammadi S.,Liang-Hung Lu ,Bhattacharya P.,Katehi L.P.B.,Alterovitz S.A.,Ponchak G.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/20204/00933773.pdf?arnumber=933773

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-band power amplifier for next generation networks based on mesfet;China Communications;2017-04

2. Fast Flexible Electronics Made from Nanomembranes Derived from High-Quality Wafers;Semiconductor Nanomaterials for Flexible Technologies;2010

3. Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate;Applied Physics Letters;2006-11-20

4. 3-W SiGe power HBTs for wireless applications;Materials Science in Semiconductor Processing;2005-02

5. On The Operation Configuration of SiGe HBTs Based on Power Gain Analysis;IEEE Transactions on Electron Devices;2005-02

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