A V-band Low Noise Amplifier in 90-nm CMOS by Inductive Coupling Technique-Reference-Cited by-同舟云学术

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A V-band Low Noise Amplifier in 90-nm CMOS by Inductive Coupling Technique

Published:2022-10-14 Issue: Volume: Page:
ISSN:
Container-title:2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA)
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Author:

Chiang Yen-Chung¹,Wang Tai-Chung¹

Affiliation:

1. National Chung Hsing University,Department of Electrical Engineering,Taichung City,Taiwan

Funder

Ministry of Education

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9971143/9971472/09971648.pdf?arnumber=9971648

Reference7 articles.

1. Low-Power, High-Gain V-Band CMOS Low Noise Amplifier for Microwave Radiometer Applications

2. A 4.9-dB NF 53.5-62-GHz micro-machined CMOS wideband LNA with small group-delay-variation;chen;Digest of IEEE MTT-S International Microwave Symposium,2010

3. 52–75 GHz wideband low-noise amplifier in 90 nm CMOS technology

4. An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS

5. Analysis and Design of Millimeter-Wave Low-Voltage CMOS Cascode LNA With Magnetic Coupled Technique

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Compact LNA with 23.3 dB Gain and 3.4 dB NF for V-Band Phased Array Systems in 65-nm CMOS Technology;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14

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