Assessing reliability issues in cryogenically-operated SiGe HBTs-Reference-Cited by-同舟云学术

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Assessing reliability issues in cryogenically-operated SiGe HBTs

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Container-title:Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.
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Author:

Chendong Zhu ,Grens C.,Enhai Zhao ,Ahmed A.,Cressler J.D.,Joseph A.J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10419/33084/01555197.pdf?arnumber=1555197

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology;IEEE Transactions on Electron Devices;2017-09

3. A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface;IEEE Aerospace and Electronic Systems Magazine;2012-06

4. Optimization of SiGe bandgap-based circuits for up to 300°C operation;Solid-State Electronics;2011-02

5. Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics;IEEE Transactions on Device and Materials Reliability;2010-12

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