A submicrometer high-performance bipolar technology-Reference-Cited by-同舟云学术

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A submicrometer high-performance bipolar technology

Published:1989-08 Issue:8 Volume:10 Page:364-366
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen T.-C.,Toh K.Y.,Cressler J.D.,Warnock J.,Lu P.-F.,Tang D.D.,Li G.P.,Chuang C.-T.,Ning T.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/1380/00031758.pdf?arnumber=31758

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Shallow and Deep Trench Isolation Process Module for RF BiCMOS;Journal of The Electrochemical Society;2004

2. Calculation of electron and hole impact ionization coefficients in SiGe alloys;Journal of Applied Physics;1996-12-15

3. High-speed low-power cross-coupled active-pull-down ECL circuit;IEEE Journal of Solid-State Circuits;1995-06

4. Fabrication of Tungsten Local Interconnect for VLSI Bipolar Technology;Journal of The Electrochemical Society;1993-10-01

5. Power partition and emitter size optimization for bipolar ECL circuit;IEEE Journal of Solid-State Circuits;1993-05

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