A study of nitrogen peak location in gate oxides grown on nitrogen implanted substrates and its impact on boron penetration
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Published:2003-05
Issue:5
Volume:24
Page:301-303
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Mirabedini M.R.,Kamath A.,Yeh W.C.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials