Observation of nitrogen-enhanced doping deactivation at the polysilicon-oxynitride interface of pMOSFETs with 12-/spl Aring/ gate dielectrics-Reference-Cited by-同舟云学术

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Observation of nitrogen-enhanced doping deactivation at the polysilicon-oxynitride interface of pMOSFETs with 12-/spl Aring/ gate dielectrics

Published:2003-07 Issue:7 Volume:24 Page:445-447
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ahmed K.Z.,Kraus P.A.,Olsen C.,Hung S.,Nouri F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27369/01217292.pdf?arnumber=1217292

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen doped silicon films heavily boron implanted for MOS structures: Simulation and characterization;Materials Science in Semiconductor Processing;2010-12

2. Optimization of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and Analytical Models;IEEE Transactions on Electron Devices;2008-05

3. Effect of Nitrogen on Boron doped Polysilicon Thin Films Properties;2007 IEEE International Symposium on Industrial Electronics;2007-06

4. Dopants;Computational Microelectronics;2004

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