Free Standing Stress Amplification Structure for Ultrasensitive 3C-SiC/Si Pressure Sensor
Author:
Affiliation:
1. Queensland Micro- and Nanotechnology Centre, Griffith University,Queensland,AUSTRALIA
2. School of Engineering and Built Environment, Griffith University,Queensland,AUSTRALIA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9966996/9966997/09967353.pdf?arnumber=9967353
Reference25 articles.
1. SiC MEMS: opportunities and challenges for applications in harsh environments
2. Ultrasensitive Self-Powered Position-Sensitive Detector Based on n-3C-SiC/p-Si Heterojunctions
3. The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review
4. Review: Semiconductor Piezoresistance for Microsystems
5. Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications
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