Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors-Reference-Cited by-同舟云学术

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Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors

Published: Issue: Volume: Page:
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Container-title:IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers
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Author:

Tkachenko Y.A.,Wei C.J.,Hwang J.C.M.,Harris T.D.,Grober R.D.,Hwang D.M.,Aucoin L.,Shanfield S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/3307/9929/00470978.pdf?arnumber=470978

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability tests on millimetre wave 100 nm gate length process for safe operating area evaluation methodology;Microelectronics Reliability;2023-11

2. Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation;Japanese Journal of Applied Physics;2008-02-15

3. Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses;Microelectronics Reliability;2006-12

4. The effect of RF-driven gate current on DC/RF performance in GaAs pHEMT MMIC power amplifiers;IEEE Transactions on Microwave Theory and Techniques;2005-11

5. High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study;Microelectronics Reliability;2002-01

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