Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications-Reference-Cited by-同舟云学术

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Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications

Published:2014-05 Issue:5 Volume:29 Page:2441-2452
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Mitova Radoslava,Ghosh Rajesh,Mhaskar Uday,Klikic Damir,Wang Miao-Xin,Dentella Alain

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/6709815/06642103.pdf?arnumber=6642103

Cited by 127 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study on thermal transport properties of GaN under different cross-plane strain;International Journal of Heat and Mass Transfer;2024-11

2. Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs;IET Power Electronics;2024-07-05

3. Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate;Applied Physics Letters;2024-04-29

4. A Non-Isolated and Cost-Effective Hybrid Driving Solution for High Voltage GaN HEMTs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

5. A High Power Density Zero-Voltage-Switching Totem-Pole Power Factor Correction Converter;IEEE Transactions on Power Electronics;2024-01

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