An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs-Reference-Cited by-同舟云学术

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An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Published:2017-10 Issue:10 Volume:32 Page:7954-7966
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Gonzalez Jose Ortiz,Alatise Olayiwola,Hu Ji,Ran Li,Mawby Philip A.

Funder

U.K. Engineering and Physical Science Research Council (EPSRC)

Underpinning Power Electronics Devices Theme

Components Theme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/7924296/07752992.pdf?arnumber=7752992

Cited by 87 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Switching Transient-Based Junction Temperature Estimation of SiC MOSFETs With Aging Compensation;IEEE Transactions on Power Electronics;2024-10

2. A Gate Degradation Independent Online Junction Temperature Estimation Method for SiC MOSFETs Based on Residual Resistance;IEEE Transactions on Power Electronics;2024-10

3. Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike;International Journal of Circuit Theory and Applications;2024-08-26

4. Review on Power Cycling Reliability of SiC Power Device;Electronic Materials;2024-06-10

5. Machine Learning Based Sensor Fusion for Junction Temperature Estimation;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

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