On the Optimization of a Class-E Power Amplifier With GaN HEMTs at Megahertz Operation
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/8956014/08825515.pdf?arnumber=8825515
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Comparative Review on the Development of High-Frequency and High-Power Capacitive Power Transfer Technology;2024 10th International Conference on Power Electronics Systems and Applications (PESA);2024-06-05
2. Load-Independent Class-E Frequency Multipliers;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-05
3. Analysis and Design of Load-Independent Series Resonant Power Amplifier With Constant Current Output and Its Application for WPT System;IEEE Transactions on Power Electronics;2024-05
4. Evaluation of GaN HEMT dv/dt Immunity and dv/dt Induced False Turn-On Energy Loss;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
5. A New Simplified Method and Design Guidelines for the Optimization of Push–Pull Class $\Phi _{2}$ Converters for Wireless Power Transfer Applications;IEEE Transactions on Power Electronics;2023-08
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