Failure Analysis of Heavy Ion-Irradiated Schottky Diodes-Reference-Cited by-同舟云学术

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Failure Analysis of Heavy Ion-Irradiated Schottky Diodes

Published:2018-01 Issue:1 Volume:65 Page:269-279
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Casey Megan C.^ORCID,Lauenstein Jean-Marie,Weachock Ronald J.,Wilcox Edward P.,Hua Lang M.,Campola Michael J.,Topper Alyson D.,Ladbury Raymond L.^ORCID,LaBel Kenneth A.

Funder

NASA Electronic Parts and Packaging Program

Transiting Exoplanet Survey Satellite

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/8263287/08168379.pdf?arnumber=8168379

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation;IEEE Transactions on Nuclear Science;2023-08

2. Molecular dynamics simulations of ultrafast radiation induced melting at metal–semiconductor interfaces;Journal of Applied Physics;2021-06-01

3. Analysis of Heavy Ion Irradiation Test Results on Power Diodes;2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2018-09

4. Single Events Induced By Heavy Ions and Laser Pulses in Silicon Schottky Diodes;IEEE Transactions on Nuclear Science;2018-08

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