The Impact of Intrinsic RC Coupling With Domains Flipping on Polarization Switching Time of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Capacitor-Reference-Cited by-同舟云学术

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The Impact of Intrinsic RC Coupling With Domains Flipping on Polarization Switching Time of Hf_0.5Zr_0.5O₂ Ferroelectric Capacitor

Published:2023-09 Issue:9 Volume:44 Page:1480-1483
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Dong Yulong¹^ORCID,Cui Tianning¹,Chen Danyang¹^ORCID,Liu Jingquan²^ORCID,Si Mengwei²^ORCID,Li Xiuyan²

Affiliation:

1. National Key Lab of Micro/Nano Fabrication Technology and the Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai, China

2. National Key Lab of Micro/Nano Fabrication Technology, Shanghai Jiao Tong University, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shanghai Pilot Program for Basic Research-Shanghai Jiao Tong University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10230308/10182267.pdf?arnumber=10182267

Reference32 articles.

1. Note on Ferroelectric Domain Switching

2. On the anomalous absorption of sound near a second order phase transition point;landau;Doklady Akademii Nauk SSSR,1954

3. Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films

4. Equivalent circuit and simulations for the Landau-Khalatnikov model of ferroelectric hysteresis

5. Kinetics of Domain Wall Motion in Ferroelectric Switching. I. General Formulation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CMOS-compatible Hf_0.5Zr_0.5O₂-based ferroelectric memory crosspoints fabricated with damascene process;Nanotechnology;2024-07-29

2. Grain-size adjustment in Hf_0.5Zr_0.5O₂ ferroelectric film to improve the switching time in Hf_0.5Zr_0.5O₂-based ferroelectric capacitor;Nanotechnology;2024-01-10

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