Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector With High Working Temperature
Author:
Affiliation:
1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
Funder
National Natural Science Foundation of China
National Ten Thousand Talent Program for Young Top-Notch Talents and Youth Innovation Promotion Association, Chinese Academy of Sciences
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10109212/10086491.pdf?arnumber=10086491
Reference27 articles.
1. Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect
2. Arrayed Van Der Waals Broadband Detectors for Dual-Band Detection
3. High Performance UV-A Detector Using Axial n-ZnO/p-CuO p-n Junction Heterostructure Nanowire Arrays
4. A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction
5. Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
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