Simulation of Transport Moiré Pattern in Van Der Waals Heterostructures-Reference-Cited by-同舟云学术

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Simulation of Transport Moiré Pattern in Van Der Waals Heterostructures

Published:2023-03 Issue:3 Volume:44 Page:544-547
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Xiangnan¹^ORCID,Lv Yawei¹^ORCID,Tong Qingjun¹,Liao Lei²,Li Kenli³^ORCID,Jiang Changzhong⁴^ORCID

Affiliation:

1. School of Physics and Electronics, Hunan University, Changsha, China

2. College of Semiconductors, Hunan University, Changsha, China

3. College of Information Science and Engineering, National Supercomputing Center in Changsha, Hunan University, Changsha, China

4. College of Materials Science and Engineering, Hunan University, Changsha, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

National Key Research and Development Program of Ministry of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10029872.pdf?arnumber=10029872

Reference22 articles.

1. Hubbard Model Physics in Transition Metal Dichalcogenide Moiré Bands

2. A comparative study of the thermoelectric performance of graphene-like BX (X = P, As, Sb) monolayers

3. Two-dimensional BX (X = P, As, Sb) semiconductors with mobilities approaching graphene

4. Electron density and transport in top-gated graphene nanoribbon devices: First-principles Green function algorithms for systems containing a large number of atoms

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1. Insights into electronic properties of strained two-dimensional semiconductors by out-of-plane bending;Journal of Physics: Condensed Matter;2023-04-20

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