Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits-Reference-Cited by-同舟云学术

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Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits

Published:2023-10 Issue:10 Volume:44 Page:1652-1655
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Kihwan¹,Kim Su Hyun¹,Kim Mingoo¹,Lim Jun Hyung²^ORCID,Park Joon Seok³,Oh Saeroonter¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea

2. IT Development Team, Samsung Display Inc., Yongin, South Korea

3. Research and Development Center, Samsung Display Inc., Yongin, South Korea

Funder

Samsung Display Company

National Research Foundation of Korea

Ministry of Science and ICT

IC Design Education Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10265125/10224529.pdf?arnumber=10224529

Reference18 articles.

1. Amorphous IGZO TFTs Featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm

2. Submicrometer Top-Gate Self-Aligned a-IGZO TFTs by Substrate Conformal Imprint Lithography

3. MOSFET channel length: extraction and interpretation

4. Scaling behaviour of a-IGZO TFTs with transparent a-IZO source/drain electrodes

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