Demonstration of a G-Band High-Power Extended Interaction Klystron-Reference-Cited by-同舟云学术

Demonstration of a G-Band High-Power Extended Interaction Klystron

Published:2023-10 Issue:10 Volume:44 Page:1736-1739
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Qu Zhaowei¹^ORCID,Zhang Zhiqiang¹,Guo Naining¹^ORCID,Jiang Changhong²^ORCID,Wang Shuzhong¹,Li Qingsheng¹,Zhao Ding¹^ORCID,Xue Qianzhong¹^ORCID,Yin Shengyi¹,Ding Yaogen¹

Affiliation:

1. Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing, China

2. National Space Science Center, Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

Science Foundation of the Aerospace Information Research Institute

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10265125/10225582.pdf?arnumber=10225582

Reference21 articles.

1. Circuit design and simulation of a 220-GHz 100-W extended interaction Klystron

2. Analysis and Improvement of Performance Instability in Extended Interaction Klystrons With Random Geometrical Perturbations

3. 15.4: Design of terahertz Extended Interaction Klystrons

4. Demonstration of a High-Power Ka-Band Extended Interaction Klystron

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3. Broadening Bandwidth of Extended Interaction Klystron Through Nonperiodic Perturbations;IEEE Transactions on Electron Devices;2024-05

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5. Design and Analysis of Phase-Locked Extended Interaction Circuits for High-Power THz Radiation;2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC);2023-11-10