Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures-Reference-Cited by-同舟云学术

Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures

Published:2023-09 Issue:9 Volume:44 Page:1547-1550
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Mukim Prashansa¹^ORCID,Shrestha Pragya R.²^ORCID,Madhavan Advait²,Prasad Nitin¹,Campbell Jason²^ORCID,Brewer Forrest D.³^ORCID,Stiles Mark D.²^ORCID,McClelland Jabez J.²

Affiliation:

1. Department of Chemistry and Biochemistry, University of Maryland College Park (UMCP), College Park, MD, USA

2. NIST, Gaithersburg, MD, USA

3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA

Funder

Cooperative Research Agreement between the University of Maryland College Park (UMCP) and the National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, through UMCP

U.S. Department of Commerce, NIST

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/10230308/10179945-aam.pdf

Reference35 articles.

1. A 12-Bit Vernier Ring Time-to-Digital Converter in 0.13 $\mu{\hbox {m}}$ CMOS Technology

2. Random telegraph noise in highly scaled nMOSFETs

3. A VCO-based analog-to-digital converter with second-order sigma-delta noise shaping;park;Proc IEEE Int Symp Circuits Syst,2009

4. Non-tunneling origin of the 1/f noise in SiC MOSFET

5. Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

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