Fully-Depleted Silicon-on-Insulator (FDSOI) Based Complementary Phototransistors for In-Sensor Vector-Matrix Multiplication

Author:

Yu Guihai1ORCID,Zhou Zheng1,Chen Ruiqi1,Li Jiaqi1,Huang Peng1ORCID,Kang Jinfeng1ORCID,Liu Xiaoyan1

Affiliation:

1. School of Integrated Circuits, Peking University, Beijing, China

Funder

National Key Research and Development Plan

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Noise Analysis of Readout Chain in FDSOI-based 1T-APS for In-Sensor Vector-Matrix-Multiplication;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. Gate-controlled gain tuning of fully depleted silicon-on-insulator-based 1 T pixel for in-sensor white balance;Japanese Journal of Applied Physics;2024-02-05

3. A Compact Model of FDSOI based 1-T Pixel Sensor for Design of In-sensor Computing;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

4. A compact model for the well-depleted 1-T pixel sensor based on silicon-on-insulator technology;Japanese Journal of Applied Physics;2023-07-01

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