A novel floating-gate method for measurement of ultra-low hole and electron gate currents in MOS transistors-Reference-Cited by-同舟云学术

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A novel floating-gate method for measurement of ultra-low hole and electron gate currents in MOS transistors

Published:1986-10 Issue:10 Volume:7 Page:561-563
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Nissan-Cohen Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31969/01486297.pdf?arnumber=1486297

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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