Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
57 articles.
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1. A 0.1-26.5 GHz Wideband Low Noise Amplifier with Single Positive Supply;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14
2. Design of A 0.1 - 40 GHz Distributed Broadband Power Amplifier;2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2020-09-20
3. Thermal analysis of GaN-on-SiC HEMTs with different backside via layouts;Japanese Journal of Applied Physics;2019-05-28
4. Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length;2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2019-05
5. fT= 260 GHz andfmax= 607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs withGm.max= 1441 mS/mm;Journal of Semiconductors;2016-07