Analytical Modeling of Short-Channel TMD TFET Considering Effect of Fringing Field and 2-D Junctions Depletion Regions
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9690079/09664233.pdf?arnumber=9664233
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spacer effects on the performance of MoTe2/MoSe2 and MoTe2/WSe2 heterostructure double gate MOSFET;Micro and Nanostructures;2024-06
2. High Performance Sub-10nm Si-doped MoS2 based Step Structure DG-TFET;Physica E: Low-dimensional Systems and Nanostructures;2024-04
3. Sensitivity Enhancement of TMD MOSFET-Based Biosensor by Modeling and Optimization of Back Gate Parameters;2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID);2024-01-06
4. Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic Frameworks;ACS Applied Nano Materials;2024-01-04
5. Impact of Process Induced Strain on the Sensitivity of Charge Plasma Doped TMD TFET Biosensor;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3