Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances-Reference-Cited by-同舟云学术

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Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances

Published:2021-07 Issue:7 Volume:68 Page:3384-3389
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lime Francois^ORCID,Cerdeira Antonio^ORCID,Estrada Magali^ORCID,Pashkovich Andrei^ORCID,Iniguez Benjamin^ORCID

Funder

Silvaco Inc.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9462946/09444547.pdf?arnumber=9444547

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Amorphous Silicon Thin-Film Transistors for Digital Circuits;Amorphous Silicon Thin-Film Transistors;2023

2. An Analytical Drain Current Model of ZnO-Based Amorphous Oxide Semiconductor Thin-Film Transistors;IEEE Transactions on Electron Devices;2022-11

3. Simplified EKV model parameter extraction in polysilicon MOSFETs;Solid-State Electronics;2022-09

4. A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier;Solid-State Electronics;2022-02

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