Impact of Trapped-Charge Variations on Scaled Ferroelectric FET Nonvolatile Memories-Reference-Cited by-同舟云学术

Impact of Trapped-Charge Variations on Scaled Ferroelectric FET Nonvolatile Memories

Published:2021-04 Issue:4 Volume:68 Page:1639-1643
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu You-Sheng,Su Pin

Funder

Ministry of Science and Technology, Taiwan

“Center for Semiconductor Technology Research” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9385809/09372393.pdf?arnumber=9372393

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