A Machine Learning-Assisted Model for GaN Ohmic Contacts Regarding the Fabrication Processes-Reference-Cited by-同舟云学术

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A Machine Learning-Assisted Model for GaN Ohmic Contacts Regarding the Fabrication Processes

Published:2021-05 Issue:5 Volume:68 Page:2212-2219
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Zeheng^ORCID,Li Liang,Yao Yuanzhe

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9410657/09380530.pdf?arnumber=9380530

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detecting defects that reduce breakdown voltage using machine learning and optical profilometry;Scientific Reports;2024-03-28

2. Analytical modeling of recessed double gate junctionless field‐effect‐transistor in subthreshold region;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-01-18

3. Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques;IEEE Transactions on Electron Devices;2024-01

4. Advanced Design of a III‐Nitride Light‐Emitting Diode via Machine Learning;Laser & Photonics Reviews;2023-10-25

5. Influence of GaN Cap Layer on E-Mode AlGaN/GaN HEMT Device with Nitrogen Implanted Gate Using TCAD Simulations;2023-09-06

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