Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9546692/09530199.pdf?arnumber=9530199
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Sensitivity and reliability assessment of pocket doped NCFET based dielectrically modulated biosensor considering steric hindrance effects;Physica Scripta;2024-09-04
2. Investigation on palladium gate electrode-based SOI junctionless FET for hydrogen gas sensing;Microelectronics Journal;2024-09
3. A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing;Semiconductor Science and Technology;2024-08-22
4. A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing;Semiconductor Science and Technology;2024-05-22
5. Design and Simulation of Dielectrically Modulated Dual Material Gate-Stack Double-Gate FinFET Biosensor;ECS Journal of Solid State Science and Technology;2024-05-01
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