Characterization of an n-Type 4-kV GTO for Pulsed Power Applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Condensed Matter Physics,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/27/7583630/07470502.pdf?arnumber=7470502
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 3.3 kV 3.3 kA Integrated Thyristor Chip for Pulse Power Applications;2023 Seminar on Industrial Electronic Devices and Systems (IEDS);2023-11-27
2. Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition;IEEE Transactions on Electron Devices;2023-02
3. Experimentally Demonstrating Fast Neutron Irradiation Effect on High-di/dt Switching Characteristics of Insulated Gate Triggered Thyristor for Pulse Power;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22
4. High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse;IEEE Electron Device Letters;2019-12
5. A high di/dt 4H-SiC thyristor with ‘-shaped’ n-base;Semiconductor Science and Technology;2019-03-06
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