Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices

Author:

Zhu Jing,Yu Siyuan,Lu Yangyang,Sun WeifengORCID,Cheng Chuanyi,Yan Ding,Zhang Yunwu,Li Shaohong,Zhang Long,Zhang Sen,He Nailong,Gu Yan

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Joint Fund for the Pre-Research of Equipment

Key Research and Development Plan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Global Potential Control Technique Used in Isolation Structure for 1200V HVICs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. An Isolation Structure Applying Potential Control Technique for 1200 V HVICs;IEEE Transactions on Electron Devices;2024-01

3. A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024

4. A Level Shifter With Almost Full Immunity to Positive dv/dt for Buck Converters;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-11

5. Comparative Analysis of Gate Driver Circuits for GaN MOSFET-Based Class E Resonant Inverter;Lecture Notes in Electrical Engineering;2023-10-03

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