Indium gallium arsenide microwave power transistors-Reference-Cited by-同舟云学术

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Indium gallium arsenide microwave power transistors

Published:1991-07 Issue:7 Volume:39 Page:1069-1075
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Johnson G.A.,Kapoor V.J.,Shokrani M.,Messick L.J.,Nguyen R.,Stall R.A.,McKee M.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/2792/00085371.pdf?arnumber=85371

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the breakdown voltage, ON-resistance and gate-charge of InGaAs LDMOS power transistors;Semiconductor Science and Technology;2012-09-13

2. Performances of planar GaAs and InGaAs Schottky diodes fabricated by Pr2O3-added liquid phase epitaxy;Microelectronic Engineering;2003-01

3. Rare earth doped high barrier height Schottky devices;Microelectronics Journal;1999-06

4. Schottky contact with dimensions less than 0.5 μm2;Microelectronic Engineering;1998-08

5. InGaAs microwave switch transistors for phase shifter circuits;IEEE Transactions on Microwave Theory and Techniques;1994-05

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