Photo-CVD SiO/sub 2/ layers on AlGaN and AlGaN-GaN MOSHFET-Reference-Cited by-同舟云学术

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Photo-CVD SiO/sub 2/ layers on AlGaN and AlGaN-GaN MOSHFET

Published:2003-08 Issue:8 Volume:50 Page:1748-1752
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Chiou Y.Z.,Chang S.J.,Su Y.K.,Wang C.K.,Lin T.K.,Bohr-Ran Huang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/27391/01218666.pdf?arnumber=1218666

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices;Japanese Journal of Applied Physics;2020-03-30

2. Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator;Japanese Journal of Applied Physics;2019-05-20

3. Comparative study on thermal robustness of GaN and AlGaN/GaN MOS devices with thin oxide interlayers;Japanese Journal of Applied Physics;2019-05-09

4. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment;Japanese Journal of Applied Physics;2018-05-17

5. SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors;Japanese Journal of Applied Physics;2018-05-11

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