Interface structure of ultrathin oxide prepared by N/sub 2/O oxidation-Reference-Cited by-同舟云学术

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Interface structure of ultrathin oxide prepared by N/sub 2/O oxidation

Published:2003-09 Issue:9 Volume:50 Page:1941-1945
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Hei Wong ,Poon V.M.C.,Kok C.W.,Chan P.J.,Gritsenko V.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/27490/01224496.pdf?arnumber=1224496

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Empirical Study of the Cut-Off Frequency of Multi-Finger Nanometer MOS Transistor;Solid State Electronics Letters;2022

2. Effect of nitrogen passivation/pre nitration on interface properties of atomic layer deposited HfO2;Journal of Materials Science: Materials in Electronics;2018-02-20

3. Atomic and Electronic Structures of Traps in Silicon Oxide and Silicon Oxynitride;Critical Reviews in Solid State and Materials Sciences;2011-07

4. Properties of Silicon Oxynitride Films Annealed under Enhanced Hydrostatic Pressure;Journal of The Electrochemical Society;2011

5. Modeling and characterization of radio-frequency characteristics of multi-finger nanometer MOS transistors;2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC);2009-12

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