Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides

Author:

Mitani Y.,Satake H.,Nakasaki Y.,Toriumi A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Experimental Analysis of Process Impacts on Fluorine Incorporated Gate Oxide Film Properties Near Gate Edge Region;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06

2. Re-consideration of Influence of Fluorine on SiO2 and SixNy Reliabilities;2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2021-04-08

3. Impacts of Depth and Lateral Profiles of Fluorine Atoms in Gate Oxide Films on Reliability;2021 IEEE International Reliability Physics Symposium (IRPS);2021-03

4. Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification;AIP Advances;2020-05-01

5. Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04

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