Investigation on the Behavior of Stacked Devices Within Output Drivers Under ESD Conditions-Reference-Cited by-同舟云学术

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Investigation on the Behavior of Stacked Devices Within Output Drivers Under ESD Conditions

Published:2012-12 Issue:12 Volume:59 Page:3313-3320
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Gi-Doo,Chun Jung-Hoon,Cao Shuqing,Beebe Stephen G.,Kwon Kee-Won,Dutton Robert W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6353354/06338282.pdf?arnumber=6338282

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impacts of Leakage-Biasing Failure-Mode Identification in the Transmission-Line Pulse Testing for Low-/High-Voltage MOSFET Components;IEEE Transactions on Industry Applications;2017-05

2. ESD Self-Protection of High-Speed Transceivers Using Adaptive Active Bias Conditioning;IEEE Transactions on Device and Materials Reliability;2017-03

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