Temperature-Oriented Mobility Measurement and Simulation to Assess Surface Roughness in Ultrathin-Gate-Oxide ($\sim$1 nm) nMOSFETs and Its TEM Evidence-Reference-Cited by-同舟云学术

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Temperature-Oriented Mobility Measurement and Simulation to Assess Surface Roughness in Ultrathin-Gate-Oxide ($\sim$1 nm) nMOSFETs and Its TEM Evidence

Published:2012-04 Issue:4 Volume:59 Page:949-955
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Ming-Jer,Chang Li-Ming,Kuang Shin-Jiun,Lee Chih-Wei,Hsieh Shang-Hsun,Wang Chi-An,Chang Sou-Chi,Lee Chien-Chih

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6172314/06145633.pdf?arnumber=6145633

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasmon-enhanced phonon and ionized impurity scattering in doped silicon;Journal of Applied Physics;2015-07-28

2. Criteria for Plasmon-Enhanced Electron Drag in Si Metal–Oxide–Semiconductor Devices;IEEE Electron Device Letters;2015-03

3. Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon;IEEE Electron Device Letters;2014-07

4. Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs;IEEE Transactions on Electron Devices;2014-02

5. Probing Long-Range Coulomb Interactions in Nanoscale MOSFETs;IEEE Electron Device Letters;2013-12

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