GaAs power FET's having the gate recess narrower than the gate-Reference-Cited by-同舟云学术

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GaAs power FET's having the gate recess narrower than the gate

Published:1986-02 Issue:2 Volume:7 Page:69-70
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Macksey H.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31961/01486120.pdf?arnumber=1486120

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Paraoxonase 1 (PON1) polymorphisms and risk for migraine;Journal of Neurology;2010-04-21

2. Comparison of Single and Tri‐Layer Technologies for Volume Production of Sub‐Half Micron Gate GaAs MESFETs;Journal of The Electrochemical Society;1992-02-01

3. Self-aligned 0.25μm W/Ti/Au gate process for high-performance pseudomorphic InAlAs/InGaAs HEMT;Electronics Letters;1990-05-24

4. Narrow Recess HEMT Technology;Journal of The Electrochemical Society;1987-10-01

5. Optimization of the n+ledge channel structure for GaAs power FET's;IEEE Transactions on Electron Devices;1986-11

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