Properties of selectively doped heterostructure transistors incorporating a superlattice donor layer-Reference-Cited by-同舟云学术

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Properties of selectively doped heterostructure transistors incorporating a superlattice donor layer

Published:1986-09 Issue:9 Volume:7 Page:552-554
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tu C.W.,Jones W.L.,Kopf R.F.,Urbanek L.D.,Shin-Shem Pei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31968/01486292.pdf?arnumber=1486292

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaAs∕GaAs high-electron mobility transistor with In[sub 0.1]Ga[sub 0.9]As∕In[sub 0.22]Ga[sub 0.78]As∕In[sub 0.1]Ga[sub 0.9]As channel grown by metal-organic chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

2. Gallium arsenide heterostructures;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

3. Chapter 1 Delta-Doping of Semiconductors: Electronic, Optical, and Structural Properties of Materials and Devices;Semiconductors and Semimetals;1994

4. Theory of the electronic properties of δ-doped layers withDXcenters in semiconductor heterostructures;Physical Review B;1993-09-15

5. Optimization of charge transfer to the active channel in δ‐doped heterostructures;Journal of Applied Physics;1993-08-15

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