Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications-Reference-Cited by-同舟云学术

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Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications

Published:2021-11-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Isukapati Sundar Babu,Morgan Adam J,Sung Woongje,Zhang Hua,Liu Tianshi,Fayed Ayman,Agarwal Anant K.,Ashik Emran,Lee Bongmook

Funder

Advanced Research Projects Agency

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645134.pdf?arnumber=9645134

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of silicon carbide CMOS technology for harsh environments;Materials Science in Semiconductor Processing;2024-08

2. A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology;Analog Integrated Circuits and Signal Processing;2024-04-23

3. Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs;IEEE Transactions on Electron Devices;2024-03

4. Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs;Materials Science in Semiconductor Processing;2024-01

5. Enhanced Design Architecture to Suppress Leakage Current of High-Voltage (HV) Lateral nMOSFETs in 4H-SiC;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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