Computationally efficient determination of threshold voltages in narrow-channel MOSFETs including fringing and inversion effects

Author:

An H.-K.,Zemanian A.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High-Speed Rail-to-Rail Class-AB Buffer Amplifier with Compact, Adaptive Biasing for FPD Applications;Electronics;2020-11-29

2. A quasi-3D analytical threshold voltage model of small geometry MOSFETs;Solid-State Electronics;1992-12

3. An electrical gridlike structure excited at infinity;Mathematics of Control, Signals, and Systems;1991-06

4. Transfinite cascades;IEEE Transactions on Circuits and Systems;1991

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