Towards Ultrawide Band Semiconductors Usage in High-Voltage MOS Devices-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Towards Ultrawide Band Semiconductors Usage in High-Voltage MOS Devices

Published:2023-06-23 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on IoT, Communication and Automation Technology (ICICAT)
language:
Short-container-title:

Author:

Yadava Narendra¹,Pandey Prashant²,Chauhan R. K.³

Affiliation:

1. Institute of Engineering & Technology, Deen Dayal Upadhyaya Gorakhpur University,Department of Electronics & Communication Engineering,Gorakhpur,Uttar Pradesh,India,273009

2. Rajkiya Engineering College,Department of Electronics & Communication Engineering,Sonbhadra,Uttar Pradesh,India,231206

3. Madan Mohan Malaviya University of Technology,Department of Electronics & Communication Engineering,Gorakhpur,Uttar Pradesh,India,273016

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10263612/10263593/10263647.pdf?arnumber=10263647

Reference21 articles.

1. RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET

2. RF Performance Enhancement of Gallium Oxide MOSFET using p-type NiO Pocket near Source and Drain Regions;yadava;Journal of Telecommunication Electronic and Computer Engineering (JTEC),2019

3. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

4. RF Performance Investigation of β-Ga2O3/Graphene and β-Ga2O3/Black Phosphorus Heterostructure MOSFETs

5. Trench gate β-Ga₂O₃ MOSFETs: a review

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP