Observation of "capacitance overshoot" in the transient current measurement of polysilicon TFT's-Reference-Cited by-同舟云学术

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Observation of "capacitance overshoot" in the transient current measurement of polysilicon TFT's

Published:1999 Issue:1 Volume:46 Page:134-138
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tam S.W.-B.,Migliorato P.,Lui O.K.B.,Quinn M.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/15902/00737451.pdf?arnumber=737451

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and Measurement of Capacitance Characteristics of a Novel Light-Controlled Dual-Directional Gate Silicon-Controlled Rectifier;Semiconductors;2021-02

2. Capacitance-voltage technique for characterization of lateral trap locations along the channel in low-temperature poly-silicon thin film transistors;Solid-State Electronics;2020-01

3. Complete Extraction of Trap Densities in Poly-Si Thin-Film Transistors;IEEE Transactions on Electron Devices;2010-12

4. Trap densities in amorphous-InGaZnO4 thin-film transistors;Applied Physics Letters;2008-03-31

5. Switch-on transient behavior of vanadium phthalocyanine based organic transistors;Applied Physics Letters;2007-08-06

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