A Microstructured Laser With Modulated Period for Beam Control
Author:
Affiliation:
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Funder
Beijing Natural Science Foundation
National Natural Science Foundation of China
National Key R&D Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/4563994/9795343/09795696.pdf?arnumber=9795696
Reference20 articles.
1. 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area
2. High-Power Ultralow Divergence Edge-Emitting Diode Laser With Circular Beam
3. Improvement of AlGaInAs/AlGaAs laser diode electro-optics characteristics by graded refractive index profile broadened waveguide
4. Ultra-narrow linewidth laser based on a semiconductor gain chip and extended Si3N4 Bragg grating
5. Inclined emitting slotted single-mode laser with 17° vertical divergence angle for PIC applications
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