A Linearization Technique for a Transconductor Using Vertical Bipolar Junction Transistors in a CMOS Process-Reference-Cited by-同舟云学术

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A Linearization Technique for a Transconductor Using Vertical Bipolar Junction Transistors in a CMOS Process

Published:2013-01 Issue:1 Volume:61 Page:195-203
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Kwon Kuduck,Nam Ilku

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/6414699/06365777.pdf?arnumber=6365777

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. WITHDRAWN: An 81MV/s SR, ±12.5V Swing Operational Amplifier with 2.15nV/√Hz Noise floor;Microelectronics Journal;2024-03

2. An Investigation of Process Variations and Mismatch Characteristics of Vertical Bipolar Junction Transistors;IEEE Access;2023

3. A 120-MHz Broadband Differential Linear Driver With Channel Mismatch Cancellation and Bandwidth Extension for B-PLC Applications;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-01

4. Linearity enhancement in the entire tuning range of CMOS OTA using a new tune compensated source degeneration technique;Microelectronics Journal;2017-08

5. A Wideband Low-Power-Consumption 22–32.5-GHz 0.18- $\mu \text{m}$ BiCMOS Active Balun-LNA With IM2 Cancellation Using a Transformer-Coupled Cascode-Cascade Topology;IEEE Transactions on Microwave Theory and Techniques;2017-02

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