Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS-Reference-Cited by-同舟云学术

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Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS

Published:2013-01 Issue:1 Volume:61 Page:553-561
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Tsai Ming-Hsien,Hsu Shawn S. H.,Hsueh Fu-Lung,Jou Chewn-Pu,Yeh Tzu-Jin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/6414671/06395789.pdf?arnumber=6395789

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Noise Amplifier at 60 GHz Using Low Loss On-Chip Inductors;Journal of Electrical and Computer Engineering;2023-08-23

2. A V-Band Compact LNA With G_m-Boosting and Noise-Cancelling Technique;2023 21st IEEE Interregional NEWCAS Conference (NEWCAS);2023-06-26

3. A Compact LNA with 23.3 dB Gain and 3.4 dB NF for V-Band Phased Array Systems in 65-nm CMOS Technology;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14

4. Application of high-temperature superconducting small current limiting against over-current in low-noise amplifier electronic circuit;Physica C: Superconductivity and its Applications;2019-08

5. 60 GHz LNA Design with Inductive Source Degeneration in 65 nm CMOS Technology;International Conference on Intelligent Data Communication Technologies and Internet of Things (ICICI) 2018;2018-12-21

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