Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature-Reference-Cited by-同舟云学术

Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature

Published:2016-10 Issue:10 Volume:64 Page:3139-3150
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Moschetti Giuseppe¹^ORCID,Thome Fabian¹,Ohlrogge Matthias¹,Goliasch Jens²,Schafer Frank²,Aja Beatriz³,Leuther Arnulf¹,Schlechtweg Michael¹,Seelmann-Eggebert Matthias¹,Ambacher Oliver¹,Wieching Gundolf²,Kotiranta Mikko¹

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg im Breisgau, Germany

2. Max Planck Institute for Radio Astronomy, Bonn, Germany

3. Department of Communications Engineering, University of Cantabria, Santander, Spain

Funder

Fraunhofer IAF and MPIfR within the Project “mHEMT Prozess-Optimierung für niedrigstes Eigenrauschen bei kryogenen Temperaturen,” jointly funded by Fraunhofer-Gesellschaft and Max-Planck-Gesellschaft

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/7582577/07547915.pdf?arnumber=7547915

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