220 - 250-GHz Phased-Array Circuits in 0.13-/spl mu/m SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

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220 - 250-GHz Phased-Array Circuits in 0.13-/spl mu/m SiGe BiCMOS Technology

Published:2013-08 Issue:8 Volume:61 Page:3115-3127
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Elkhouly Mohamed,Glisic Srdjan,Meliani Chafik,Ellinger Frank,Scheytt J. Christoph

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6574231/06507360.pdf?arnumber=6507360

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Multipurpose D-Band Vector Modulator for FMCW and PMCW Sensing Applications in 130 nm SiGe;IEEE Transactions on Microwave Theory and Techniques;2024-08

2. A 256–287 GHz Full 360° Hybrid-type Phase Shifter with Active SPDT Switches;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

3. A 100–300 GHz Attenuator-Based Ultrawideband Vector Modulator;IEEE Transactions on Terahertz Science and Technology;2024-05

4. A 240-GHz VMPS With 1.2° and 0.35-dB RMS Errors in 130-nm BiCMOS:C Technology;IEEE Microwave and Wireless Technology Letters;2024-03

5. A D-Band Phased-Array Chain Based on a Tunable Branchline Coupler and a Digitally Controlled Vector Modulator;IEEE Journal of Microwaves;2024-01

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