4–12- and 25–34-GHz Cryogenic mHEMT MMIC Low-Noise Amplifiers

Author:

Aja Abelan Beatriz1,Seelmann-Eggebert Matthias2,Bruch Daniel2,Leuther Arnulf2,Massler Hermann2,Baldischweiler Boris2,Schlechtweg Michael2,Gallego-Puyol Juan Daniel3,Lopez-Fernandez Isaac3,Diez-Gonzalez Carmen3,Malo-Gomez Inmaculada3,Villa Enrique1,Artal Eduardo1

Affiliation:

1. University of Cantabria, Santander, Spain

2. Fraunhofer Institute For Applied Solid State Physics, Freiburg, Germany

3. Centro Astronómico de Yebes, CDT (IGN), Guadalajara, Spain

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 2-12GHz SiGe BiCMOS Cryogenic LNA with 6K Noise Temperature and 1.3mW DC Power;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

2. Investigation of drain noise in InP pHEMTs using cryogenic on-wafer characterization;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

3. Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures;IEEE Transactions on Microwave Theory and Techniques;2023-05

4. Design of 4–40 GHz Ultra-wideband Low Noise Amplifier for Radio Astronomy;Chinese Astronomy and Astrophysics;2022-10

5. The science case and challenges of space-borne sub-millimeter interferometry;Acta Astronautica;2022-07

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