Highly Efficient Asymmetric Class-F−1/F GaN Doherty Amplifier-Reference-Cited by-同舟云学术

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Highly Efficient Asymmetric Class-F−1/F GaN Doherty Amplifier

Published:2018-09 Issue:9 Volume:66 Page:4070-4077
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Kim Joonhyung^ORCID

Funder

National Research Foundation of Korea

Korea Government (MSIT)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/8454363/08370104.pdf?arnumber=8370104

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and design of symmetrical coupled Doherty power amplifier with extended high-efficiency range;AEU - International Journal of Electronics and Communications;2024-12

2. Review on Solid-State Narrow and Wide-Band Power Amplifier;Arabian Journal for Science and Engineering;2024-08-23

3. Investigation of class-F power amplifier in the presence of the second and fourth harmonics of input voltage;Scientific Reports;2024-04-02

4. Simplified All-in-One Load Network of the Broadband Doherty Power Amplifier;IEEE Transactions on Microwave Theory and Techniques;2024

5. Power Consumption and Reduction of High-Power Amplifier in 5G NR Downlink;IEEE Access;2024

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