Low-temperature joining of semiconductor substrates and thin layers on solid and flexible wafers by solid-liquid inter-diffusion bonding using a low-thickness Ni-Sn system-Reference-Cited by-同舟云学术

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Low-temperature joining of semiconductor substrates and thin layers on solid and flexible wafers by solid-liquid inter-diffusion bonding using a low-thickness Ni-Sn system

Published:2023-05-28 Issue: Volume: Page:
ISSN:
Container-title:2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP)
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Author:

Zanetti Martina¹,Hamon Gwenaëlle²,Regregny Philippe¹,Leclercq Jean-Louis¹,Aimez Vincet²,Darnon Maxime²,Danescu Alexandre¹

Affiliation:

1. Univ. Lyon, CNRS, INSA Lyon, Ecole Centrale de Lyon, Univ. Claude Bernard Lyon 1,CPE Lyon, INL Ecully,France

2. Université de Sherbrooke, Laboratoire Nanotechnologies Nanosystemes (LN2) - CNRS,Institut Interdisciplinaire d’Innovation Technologique (3IT),Sherbrooke,Canada,IRL-3463

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10267916/10267866/10267939.pdf?arnumber=10267939

Reference11 articles.

1. Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer

2. A low-temperature sealing method for metal-supported oxide fuel cell applications: Ni–Sn transient liquid phase bonding

3. Low temperature solid–liquid interdiffusion wafer and die bonding based on PVD thin Sn/Cu films

4. Critical interlayer thickness for transient liquid phase bonding in the Cu–Sn system

5. Transient liquid phase bonding of Sn-Pb solder with added Ni particles

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